| PART |
Description |
Maker |
| K7S1636U4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7Q163664B-FC16 K7Q161864B-FC16 |
512Kx36 & 1Mx18 QDR TM b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| K7Q161862B |
(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
| K7P161866A K7P163866A |
(K7P161866A / K7P163866A) 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM
|
Samsung semiconductor
|
| K7N163601MK7N161801M K7N161801M-TC160 |
1M X 18 ZBT SRAM, 3.5 ns, PQFP100
512Kx36 & 1Mx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| IS61DDB41M18A |
1Mx18, 512Kx36 18Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7I323682M K7I321882M K7M161825A-QCI65 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6X8016T3B K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-TF |
CONNECTOR ACCESSORY
512Kx16 bit Low Power Full CMOS Static RAM
512Kx36 & 1Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| CY7C1543KV18-400BZC CY7C1545KV18-450BZXI |
Sync SRAM; Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| IS61QDP2B451236A1 IS61QDP2B451236A2 |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
| IS61QDPB251236A IS61QDPB251236A1 IS61QDPB251236A2 |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
